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Electrical Characteristics (T J = 25°C, unless otherwise specified.)
Inverter Part
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
V CE(SAT)
Collector - Emitter Saturation V CC = V BS = 15 V
I C = 10 A, T J = 25°C
-
-
2.2
V
Voltage
V IN = 5 V
V F
FWDi Forward Voltage
V IN = 0 V
I F = 10 A, T J = 25°C
-
-
2.6
V
HS
t ON
t C(ON)
t OFF
Switching Times
V PN = 300 V, V CC = V BS = 15 V
I C = 10 A
V IN = 0 V ? 5 V, Inductive Load
(2nd Note 3)
-
-
-
0.75
0.15
0.50
-
-
-
? s
? s
? s
t C(OFF)
t rr
-
-
0.15
0.10
-
-
? s
? s
LS
t ON
t C(ON)
t OFF
t C(OFF)
t rr
I CES
V PN = 300 V, V CC = V BS = 15 V
I C = 10 A
V IN = 0 V ? 5 V, Inductive Load
(2nd Note 3)
Collector - Emitter Leakage V CE = V CES
-
-
-
-
-
-
0.50
0.25
0.50
0.15
0.10
-
-
-
-
-
-
1
? s
? s
? s
? s
? s
mA
Current
2nd Notes:
3. t ON and t OFF include the propagation delay of the internal drive IC. t C(ON) and t C(OFF) are the switching time of IGBT itself under the given gate driving condition internally. For
the detailed information, please see Figure 4.
Control Part
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
I QCCL
Quiescent V CC Supply
V CC = 15 V
V CC(L) - COM
-
-
23
mA
Current
IN (UL, VL, WL) = 0 V
I QCCH
V CC = 15 V
V CC(H) - COM
-
-
600
? A
IN (UH, VH, WH) = 0 V
I QBS
Quiescent V BS Supply
V BS = 15 V
V B(U) - V S(U) , V B(V) - V S(V) ,
-
-
500
? A
Current
IN (UH, VH, WH) = 0 V
V B(W) - V S(W)
V FOH
V FOL
V SC(ref)
Fault Output Voltage
Short-Circuit Current
V SC = 0 V, V FO Circuit: 4.7 k ? to 5 V Pull-up
V SC = 1 V, V FO Circuit: 4.7 k ? to 5 V Pull-up
V CC = 15 V (2nd Note 4)
4.5
-
0.45
-
-
0.50
-
0.8
0.55
V
V
V
Trip Level
TSD
Over-Temperature
Temperature at LVIC
-
160
-
°C
Protection
? TSD
Over-Temperature
Temperature at LVIC
-
5
-
°C
Protection Hysterisis
UV CCD
UV CCR
UV BSD
UV BSR
t FOD
V IN(ON)
V IN(OFF)
Supply Circuit
Under-Voltage Protection
Fault-Out Pulse Width
ON Threshold Voltage
OFF Threshold Voltage
Detection Level
Reset Level
Detection Level
Reset Level
C FOD = 33 nF (2nd Note 5)
Applied between IN (UH) , IN (VH) , IN (WH) , IN (UL) ,
IN (VL) , IN (WL) - COM
10.7
11.2
10
10.5
1.0
2.8
-
11.9
12.4
11
11.5
1.8
-
-
13.0
13.4
12
12.5
-
-
0.8
V
V
V
V
ms
V
V
2nd Notes:
4. Short-circuit protection is functioning only at the low-sides.
5. The fault-out pulse width t FOD depends on the capacitance value of C FOD according to the following approximate equation: C FOD = 18.3 x 10 -6 x t FOD [F]
?2007 Fairchild Semiconductor Corporation
FSBF10CH60BT Rev. C3
6
www.fairchildsemi.com
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